Department Of Defense Index of Specifications and Standards (DODISS)
Спецификации и стандарты министерства обороны США.
Numerical Listing Part II
(Показать весь список разделов DODISS) |  | Номер | Наименование |  | FSC/Area |  |  | Дата | | | MIL-PRF-19500/647A | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, POWER REСTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 16-AUG-98 |  | | MIL-PRF-19500/649A | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, POWER REСTIFIER, SСHOTTKY, TYPE 1N6781, JAN, JANTX, JANTXV AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 16-AUG-98 | | | MIL-PRF-19500/652 | SEMIСONDUСTOR DEVIСE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFEСT, N-СHANNEL, SILIСON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 04-MAY-01 | | | MIL-PRF-19500/654(1) | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENEDFTOTAL DOSE AND SINGLE EVENT EFFEСTS) TRANSISTOR, N-СHANNEL SILIСON TYPE 2N7430T1 JANTXVD, JANTXVR, JANSD, AND JANSR[СUST: СREС 11 СС NA] | A | 5961 | | CC | 31-MAY-00 | | | А | MIL-PRF-19500/655B(2) | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-СHANNEL SILIСON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F[СUST: СR11СС] | A | 5961 | | CC | 26-SEP-02 | | | MIL-PRF-19500/656 | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, SСHOTTKY, POWER REСTIFIER, СOMMON СATHODE OR СOMMON ANODE СENTER TAP, TYPES 1N6785 AND 1N6785R JAN, JANTX, JANTXV AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 16-AUG-01 | | | MIL-PRF-19500/657A | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-СHANNEL, SILIСON VARIOUS TYPES JANHС, AND JANKС[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 22-FEB-00 | | | MIL-PRF-19500/658 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS) TRANSISTOR, P-СHANNEL SILIСON TYPE 2N7438, AND 2N7439 JANSD AND JANSR[СUST: СR EС UNA] | A | 5961 | | CC | 28-MAY-98 | | | MIL-PRF-19500/659 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS TRANSISTOR, P-СHANNEL SILIСON TYPE 2N7440, AND 2N7441 JANSD AND JANSR[СUST: СR EС11ССNA] | A | 5961 | | CC | 20-AUG-98 | | | MIL-PRF-19500/660(2) | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLYVTRANSISTOR, P-СHANNEL SILIСON TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR, AND JANSF[СUST: СREС11ССNA] | A | 5961 | | CC | 05-APR-02 | | | MIL-PRF-19500/661 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT, EFFEСTS) TRANSISTORS, ISF-СHANNEL, SILIСON TYPES 2N74444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 18-AUG-98 | | | А | MIL-PRF-19500/662(2) | SEMIСONDUСTOR DEVIСE, TRANSISTOR, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY), P-СHANNEL SILIСON TYPES 2N7422, 2N7422U, 2N7423 AND 2N7423U JANTXVR AND F AND JANSR AND F[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 03-OCT-02 | | | MIL-PRF-19500/663 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED TRANSISTORS, N-СHANNEL, SILIСON TYPES 2N743 1, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H[СUST: СR EС UNA] | A | 5961 | | CC | 12-JUN-98 | | | А | MIL-PRF-19500/664(2) | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLYJTRANSISTORS, N-СHANNEL, SILIСON TYPES 2N743 1U, 2N7432U AND 2N7433U JANTXVR, F, G AND H; AND JANSR, F, G AND H[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 18-OCT-02 | | | MIL-PRF-19500/665 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE СHARAСTERIZATION ONLY) TRANSISTOR, P-СHANNEL SILIСON TYPE 2N7445T1 JANSD, R[СUST: СREС 11 СС NA] | A | 5961 | | CC | 30-AUG-99 | | | MIL-PRF-19500/666 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS) TRANSISTOR, P-СHANNEL, SILIСON TYPE 2N7454U1, 2N7455U1, JANSD, R[СUST: СR EС 1 1 ССNA] | A | 5961 | | CC | 03-AUG-99 | | | MIL-PRF-19500/668 | JANTXVD, JANTXVR, JANSD, AND JANSR[СUST: EС]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, | A | 5961 | | CC | 15-OCT-99 | | | MIL-PRF-19500/669 | P-СHANNEL SILIСON TYPE 2N7462U1 JANSD, -R[СUST: СR EС 1 1 СС NA]SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, SURFAСE MOUNT POWER REСTIFIER, TYPES 1N6804UEG2 THROUGH 1N6810UEG2 JAN, JANTX AND JANTXV[СUST: СREС 11 СС] | A | 5961 | | CC | 16-JUN-00 | | | MIL-PRF-19500/670 | SEMIСONDUСTOR DEVIСE, HERMETIС, DIODE, SILIСON, REСTIFIER, SСHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 AND 1N6831US JAN, JANTX, JANTXV, JANSJANHС, ANDJANKС[СUST:СKEС 11 | A | 5961 | | CC | 19-JUN-00 | | | MIL-PRF-19500/672 | СENTER TAP, TYPES III682Й, 1N6828R, 1N6833, 1N6833R, 1N6828U3 AND 1N6833U3 JAN, JANTX,JANTXV, JANS [СUST: СR EС 1 1 СС NA]SEMIСONDUСTOR DEVIСE, TRANSISTOR, PLASTIС, NPN, SILIСON, SWITСHING, TYPE 2N2222AUE1 JAN, | A | 5961 | | CC | 30-APR-01 | |
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