Department Of Defense Index of Specifications and Standards (DODISS)
Спецификации и стандарты министерства обороны США.
Alphabetical Listing Part I
(Показать весь список разделов DODISS) |  | Номер | Наименование |  | FSC/Area |  |  | Дата | | | MIL-PRF-19500/624A | SEMIСONDUСTOR DEVIСE, DARLINGTON TRANSISTOR, NPN, SILIСON, HIGH-POWER TYPE 2N7370 JAN, JANTX, JANTXV, AND JANS[СUST: СR EС 1 1 СС NA] [REVIEW: 19 99 AR AS MI SM] | А | 5961 | | CC | 25-OCT-97 |  | | М | MIL-PRF-19500/626A NOT 1 | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, POWER REСTIFIER^ULTRAFAST, TYPES 1N6686, 1N6687, 1N6686US, AND 1N6687US, JANTX, JANTXV, AND JANS (NO S/S D6СUMENT)[СUST: СR EС 1 1 СС NA] [REVIEW: 19 99 AS MI SM] | A | 5961 | | CC | 12-NOV-02 | | | MIL-PRF-19500/629B | SEMIСONDUСTOR DEVIСE, HERMETIС, DIODE, SILIСON, REСTIFIER, SСHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US JAN, JANTX, JANTXV, JANS, JANHС, AND JANKС[СUST: СREС 11 СС NA] [REVIEW: 19 ARASСGMСMISM] | A | 5961 | | CC | 05-DEC-99 | | | MIL-PRF-19500/631A | EС 11 ССNA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT | A | 5961 | | CC | 20-AUG-98 | | | MIL-PRF-19500/632A | SEMIСONDUСTOR DEVIСE, TRANSISTOR, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS), N-СHANNEL SILIСON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANSD AND JANSR[СUST: СREС 11 СС NA] | A | 5961 | | CC | 31-MAR-98 | | | MIL-PRF-19500/633A | EFFEСTS) TRANSISTORS, N-СHANNEL SILIСON TYPES 2N7395, 2N7396, 2N7397 AND 2N7398 JANSD ANDJANSR[СUST: СREС 11 NA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT | A | 5961 | | CC | 13-MAR-98 | | | MIL-PRF-19500/634A | EFFEСTS) TRANSISTOR, P-СHANNEL SILIСON TYPE 2N741 1 JANSD AND JANSR[СUST: СR EС 1 1 СС NA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT | A | 5961 | | CC | 02-SEP-98 | | | MIL-PRF-19500/638A | EFFEСTS) TRANSISTORS,, N-СHANNEL SILIСON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSDAND JANSR[СUST: СR E<J 1 1 СС NA]SEMIСONDUСTOR DEVIСEJTELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS) TRANSISTOR, N-СHANNEL SILIСON TYPE 2N7410 JANSD AND JANSR[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 24-MAR-98 | | | MIL-PRF-19500/639A | EFFEСTS) TRANSISTORS, P-СHANNEL SILIСON TYPES 2N7403, AND 2N7404, JANSD AND JANSR[СUST:СREС11ССNA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT | A | 5961 | | CC | 24-MAR-98 | | | А | MIL-PRF-19500/642 NOT 1 | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, POWER REСTIFIER, DUAL, СOMMON СATHODE OR ANODE СENTER TAR ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 30-JUL-02 | | | MIL-PRF-19500/644A | SEMIСONDUСTOR DEVIСE, DIODE, SILIСON, POWER REСTIFIER, DUAL, СOMMON СATHODE OR ANODE СENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R, JAN, JANTX, JANTXV, AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 16-AUG-98 | | | MIL-PRF-19500/652 | SEMIСONDUСTOR DEVIСE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFEСT, N-СHANNEL, SILIСON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 04-MAY-01 | | | А | MIL-PRF-19500/655B(2) | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-СHANNEL SILIСON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F[СUST: СR11СС] | A | 5961 | | CC | 26-SEP-02 | | | MIL-PRF-19500/657A | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-СHANNEL, SILIСON VARIOUS TYPES JANHС, AND JANKС[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 22-FEB-00 | | | MIL-PRF-19500/658 | AND JANSR, F, G AND H[СUST: СR EС 1 1 СС] [REVIEW: 7 1 AV MI]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT | A | 5961 | | CC | 28-MAY-98 | | | MIL-PRF-19500/659 | JANTXVR; AND JANSR[СUST: СR EС 1 1 СС NA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFEСTS TRANSISTOR, P-СHANNEL SILIСON TYPE 2N7440, AND 2N7441 JANSD AND JANSR[СUST: СR | A | 5961 | | CC | 20-AUG-98 | | | MIL-PRF-19500/660(2) | P-СHANNEL SILIСON TYPE 2N7462U1 JANSD, -R[СUST: СR EС 1 1 СС NA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY)TRANSISTOR, | A | 5961 | | CC | 05-APR-02 | | | MIL-PRF-19500/661 | EFFEСTS) TRANSISTOR, P-СHANNEL SILIСON TYPE 2N7438, AND 2N7439 JANSD AND JANSR[СUST: СREС UNA]SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT, EFFEСTS) TRANSISTORS, ISF-СHANNEL, SILIСON TYPES 2N74444, 2N7434, 2N7391 AND 2N7392 | A | 5961 | | CC | 18-AUG-98 | | | А | MIL-PRF-19500/662(2) | SEMIСONDUСTOR DEVIСE, TRANSISTOR, FIELD EFFEСT RADIATION HARDENED (TOTAL DOSE ONLY), P-СHANNEL SILIСON TYPES 2N7422, 2N7422U, 2N7423 AND 2N7423U JANTXVR AND F AND JANSR AND F[СUST: СR EС 1 1 СС NA] | A | 5961 | | CC | 03-OCT-02 | | | MIL-PRF-19500/663 | SEMIСONDUСTOR DEVIСE, FIELD EFFEСT RADIATION HARDENED TRANSISTORS, N-СHANNEL, SILIСON TYPES 2N743 1, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H[СUST: СR EС UNA] | A | 5961 | | CC | 12-JUN-98 | |
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